STGWA30H60DFB Todos los transistores

 

STGWA30H60DFB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA30H60DFB

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 14.6 nS

Coesⓘ - Capacitancia de salida, typ: 101 pF

Encapsulados: TO247

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STGWA30H60DFB datasheet

 ..1. Size:698K  st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf pdf_icon

STGWA30H60DFB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para

 7.1. Size:419K  st
stgwa30n120kd.pdf pdf_icon

STGWA30H60DFB

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

 7.2. Size:321K  st
stgwa30ih65df.pdf pdf_icon

STGWA30H60DFB

STGWA30IH65DF Datasheet Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft commutation only Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa

 7.3. Size:562K  st
stgw30m65df2 stgwa30m65df2.pdf pdf_icon

STGWA30H60DFB

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery

Otros transistores... STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , IKW75N60T , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 .

History: SPT25N120F1A1

 

 

 


History: SPT25N120F1A1

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