STGWA30H60DFB Даташит. Аналоги. Параметры и характеристики.
Наименование: STGWA30H60DFB
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 260 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 14.6 nS
Coesⓘ - Выходная емкость, типовая: 101 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
STGWA30H60DFB Datasheet (PDF)
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para
stgwa30n120kd.pdf

STGW30N120KDSTGWA30N120KD30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short
stgwa30ih65df.pdf

STGWA30IH65DFDatasheetTrench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa
stgw30m65df2 stgwa30m65df2.pdf

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SM2G100US120 | HCKW75N65BH2 | IXXH30N65B4 | RGTH40TS65 | SKM50GB12V | IRGIB15B60KD1P | MMG150D170B6TC
History: SM2G100US120 | HCKW75N65BH2 | IXXH30N65B4 | RGTH40TS65 | SKM50GB12V | IRGIB15B60KD1P | MMG150D170B6TC



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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