STGWA20IH65DF Todos los transistores

 

STGWA20IH65DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA20IH65DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 159 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

Coesⓘ - Capacitancia de salida, typ: 62 pF

Encapsulados: TO247

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STGWA20IH65DF datasheet

 ..1. Size:321K  st
stgwa20ih65df.pdf pdf_icon

STGWA20IH65DF

STGWA20IH65DF Datasheet Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft-commutation Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package

 7.1. Size:523K  st
stgwa20m65df2.pdf pdf_icon

STGWA20IH65DF

STGWA20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode C (2) Applications Motor control UPS PFC G (1) General-purp

 7.2. Size:539K  st
stgwa20h65dfb2.pdf pdf_icon

STGWA20IH65DF

STGWA20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te

 7.3. Size:369K  st
stgwa20hp65fb2.pdf pdf_icon

STGWA20IH65DF

STGWA20HP65FB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic

Otros transistores... STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , RJH30E2DPP , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 .

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History: T2250AB25E

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