STGWA20IH65DF Todos los transistores

 

STGWA20IH65DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA20IH65DF
   Tipo de transistor: IGBT + Diode
   Código de marcado: G20IH65DF
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 159 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 62 pF
   Qgⓘ - Carga total de la puerta, typ: 56 nC
   Paquete / Cubierta: TO247

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STGWA20IH65DF Datasheet (PDF)

 ..1. Size:321K  st
stgwa20ih65df.pdf

STGWA20IH65DF
STGWA20IH65DF

STGWA20IH65DFDatasheetTrench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft-commutation Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package

 7.1. Size:523K  st
stgwa20m65df2.pdf

STGWA20IH65DF
STGWA20IH65DF

STGWA20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diodeC (2)Applications Motor control UPS PFCG (1) General-purp

 7.2. Size:539K  st
stgwa20h65dfb2.pdf

STGWA20IH65DF
STGWA20IH65DF

STGWA20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te

 7.3. Size:369K  st
stgwa20hp65fb2.pdf

STGWA20IH65DF
STGWA20IH65DF

STGWA20HP65FB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic

Otros transistores... STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , TGAN60N60F2DS , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 .

 

 
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