STGWA20IH65DF Todos los transistores

 

STGWA20IH65DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA20IH65DF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 159 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 62 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

STGWA20IH65DF Datasheet (PDF)

 ..1. Size:321K  st
stgwa20ih65df.pdf pdf_icon

STGWA20IH65DF

STGWA20IH65DFDatasheetTrench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft-commutation Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package

 7.1. Size:523K  st
stgwa20m65df2.pdf pdf_icon

STGWA20IH65DF

STGWA20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diodeC (2)Applications Motor control UPS PFCG (1) General-purp

 7.2. Size:539K  st
stgwa20h65dfb2.pdf pdf_icon

STGWA20IH65DF

STGWA20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te

 7.3. Size:369K  st
stgwa20hp65fb2.pdf pdf_icon

STGWA20IH65DF

STGWA20HP65FB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic

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History: GT50J301 | APTGT100X120TE3 | SKM100GAL12T4 | BLG60T65FUL-F | APTGT100DA120D1 | FF100R12RT4 | F4-100R12KS4

 

 
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