STGWA20M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA20M65DF2
Tipo de transistor: IGBT + Diode
Código de marcado: G20M65DF2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 166
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 10.8
Capacitancia de salida (Cc), typ, pF: 95
Carga total de la puerta (Qg), typ, nC: 63
Paquete / Cubierta: TO247
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STGWA20M65DF2 Datasheet (PDF)
stgwa20m65df2.pdf
STGWA20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diodeC (2)Applications Motor control UPS PFCG (1) General-purp
stgwa20h65dfb2.pdf
STGWA20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te
stgwa20hp65fb2.pdf
STGWA20HP65FB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic
stgwa20ih65df.pdf
STGWA20IH65DFDatasheetTrench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft-commutation Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package
Otros transistores... STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , YGW40N65F1 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB .
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