AFGY120T65SPD-B4 Todos los transistores

 

AFGY120T65SPD-B4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFGY120T65SPD-B4

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 882 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.44 V @25℃

trⓘ - Tiempo de subida, typ: 134 nS

Coesⓘ - Capacitancia de salida, typ: 440 pF

Encapsulados: TO247

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AFGY120T65SPD-B4 datasheet

 0.1. Size:1591K  onsemi
 afgy120t65spd-b4.pdf pdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A www.onsemi.com AFGY120T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

 1.1. Size:340K  onsemi
 afgy120t65spd.pdf pdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

 9.1. Size:2590K  onsemi
 afgy160t65spd-b4.pdf pdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A www.onsemi.com AFGY160T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

 9.2. Size:339K  onsemi
 afgy100t65spd.pdf pdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

MOSTRAR MÁS

Otros transistores... AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , TGAN20N135FD , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH .

History: STGF5H60DF | STGD5H60DF | MPBW25N120B | JT05N065FED | NCE40TD120WT | NCE40TD120BT | BG200B12UY3-I

 

 

 

 

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