AFGY120T65SPD-B4 - аналоги и описание IGBT

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A www.onsemi.com AFGY120T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A www.onsemi.com AFGY160T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu