Справочник IGBT. AFGY120T65SPD-B4

 

AFGY120T65SPD-B4 Даташит. Аналоги. Параметры и характеристики.


   Наименование: AFGY120T65SPD-B4
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 882 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 240 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.44 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 134 nS
   Coesⓘ - Выходная емкость, типовая: 440 pF
   Тип корпуса: TO247
 

 Аналог (замена) для AFGY120T65SPD-B4

   - подбор ⓘ IGBT транзистора по параметрам

 

AFGY120T65SPD-B4 Datasheet (PDF)

 0.1. Size:1591K  onsemi
afgy120t65spd-b4.pdfpdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 1.1. Size:340K  onsemi
afgy120t65spd.pdfpdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.1. Size:2590K  onsemi
afgy160t65spd-b4.pdfpdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.2. Size:339K  onsemi
afgy100t65spd.pdfpdf_icon

AFGY120T65SPD-B4

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

Другие IGBT... AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , TGPF30N43P , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH .

 

 
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