FGA25N120ANTDTU IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGA25N120ANTDTU datasheet

0.1. Size:653K fairchild semi
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u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

0.2. Size:1382K onsemi
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FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features Description NPT Trench Technology, Positive Temperature Coefficient Using ON Semiconductor's proprietary trench design and Low Saturation Voltage VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25 C superior conduction and switching performances, high avalanche ruggedness an

5.1. Size:687K fairchild semi
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February 2009 FGA25N120FTD tm 1200V, 25A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 25A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation wit

Otros transistores... AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , MGD623S , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF , FGA5065ADF .