FGAF40N60SMD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FGAF40N60SMD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Máxima potencia disipada (Pc), W: 115
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 20
   Capacitancia de salida (Cc), typ, pF: 180
   Carga total de la puerta (Qg), typ, nC: 119
   Paquete / Cubierta: TO3PF

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FGAF40N60SMD Datasheet (PDF)

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fgaf40n60smd.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fgaf40n60uf.pdf

IGBTFGAF40N60UFUltrafast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

5.2. Size:583K fairchild semi
fgaf40n60ufd.pdf

IGBTFGAF40N60UFDUltrafast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

5.3. Size:405K onsemi
fgaf40n60uf.pdf