FGAF40N60SMD IGBT. Datasheet pdf. Equivalent

   Type Designator: FGAF40N60SMD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 115
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 180
   Total Gate Charge (Qg), typ, nC: 119
   Package: TO3PF

FGAF40N60SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGAF40N60SMD Datasheet (PDF)

..1. Size:508K onsemi
fgaf40n60smd.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.1. Size:494K fairchild semi
fgaf40n60uf.pdf

IGBTFGAF40N60UFUltrafast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

5.2. Size:583K fairchild semi
fgaf40n60ufd.pdf

IGBTFGAF40N60UFDUltrafast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

5.3. Size:405K onsemi
fgaf40n60uf.pdf