FGB20N60SFD-F085 Todos los transistores

 0.1. Size:758K  onsemi
 fgb20n60sfd-f085.pdf

FGB20N60SFD-F085 600V, 20A Field Stop IGBT General Description Features Using novel field-stop IGBT t echnology, ON Semiconductor s High current capability new series of field-stop IGBTs offers the optimum Low saturation voltage VCE(sat) = 2.2V @ IC = 20A performance for automotive chargers, inverters, and other applications where low conduction and switching losses are

 3.1. Size:473K  fairchild semi
 fgb20n60sfd.pdf

March 2015 FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications High Current Capability Solar Inverter, UPS, Welder, PFC Low Saturation Voltage VCE(sat) = 2.2 V @ IC = 20 A General Description High Input Impedance Fast Switching EOFF = 8 uJ/A Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar i

 4.1. Size:643K  fairchild semi
 fgb20n60sf.pdf

March 2015 FGB20N60SF 600 V, 20 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage VCE(sat) =2.2 V @ IC = 20 A welder and PFC applications where low conduction and switch- High Input Impedance ing losses