FGB3040G2-F085 Todos los transistores

 

FGB3040G2-F085 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGB3040G2-F085

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 10 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃

trⓘ - Tiempo de subida, typ: 1900 nS

Encapsulados: D2PAK

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FGB3040G2-F085 datasheet

 ..1. Size:1340K  onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf pdf_icon

FGB3040G2-F085

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.1. Size:961K  onsemi
fgd3040g2-f085c fgb3040g2-f085c.pdf pdf_icon

FGB3040G2-F085

FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features www.onsemi.com SCIS Energy = 300 mJ at TJ = 25 C Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free and are RoHS Compliant Applications R1 GATE Automotive Ignition Coil Driver Circuits R2 High Current Ignit

 7.1. Size:864K  onsemi
fgb3040cs.pdf pdf_icon

FGB3040G2-F085

FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p

 9.1. Size:151K  onsemi
afgb30t65sqdn.pdf pdf_icon

FGB3040G2-F085

AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical

Otros transistores... FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , BT60T60ANFK , FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 .

History: FGB3040CS | MG25Q6ES51 | FGHL75T65LQDT

 

 

 


History: FGB3040CS | MG25Q6ES51 | FGHL75T65LQDT

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