FGB3040G2-F085 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: FGB3040G2-F085
Тип транзистора: IGBT
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 150
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 400
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 10
Максимальный постоянный ток коллектора |Ic| @25℃, A: 41
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.15
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 1900
Тип корпуса: D2PAK
Аналог (замена) для FGB3040G2-F085
FGB3040G2-F085 Datasheet (PDF)
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit
fgb3040cs.pdf
FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p
afgb30t65sqdn.pdf
AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical
fgb3056-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Другие IGBT... FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , GT40QR21 , FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ