FGD3440G2-F085 Todos los transistores

 

FGD3440G2-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGD3440G2-F085
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 166 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 26.9 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 2000 nS
   Qgⓘ - Carga total de la puerta, typ: 24 nC
   Paquete / Cubierta: TO252

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FGD3440G2-F085 Datasheet (PDF)

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fgb3440g2-f085 fgd3440g2-f085 fgp3440g2-f085.pdf

FGD3440G2-F085
FGD3440G2-F085

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fgd3440g2-f085v.pdf

FGD3440G2-F085
FGD3440G2-F085

EcoSPARK) 2 N-ChannelIgnition IGBT335 mJ, 400 VFGD3440G2-F085VFeatures SCIS Energy = 335 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coil on Plug Applic

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