FGB40T65SPD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGB40T65SPD-F085 Datasheet (PDF)

0.1. Size:2020K onsemi
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IGBT - Field Stop, Trench650 V, 40 AFGB40T65SPD-F085General DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, while provides 50 V higher blocking voltage andCrugged high current switching reli

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AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT

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April 2013FGB40N60SM600 V, 40 A Field Stop IGBTFeatures General DescriptionUUsing novel field stop IGBT technology, Fairchilds new series Maximum Junction Temperature : TJ = 175oCof Field Stop 2nd generation IGBTs offer the optimum Positive Temperaure Co-efficient for Easy Parallel Operatingperformance for welder and PFC applications where low High Curre

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