FGB40T65SPD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGB40T65SPD-F085
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 267 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 26 nS
Coesⓘ - Capacitancia de salida, typ: 92 pF
Qgⓘ - Carga total de la puerta, typ: 36 nC
Paquete / Cubierta: D2PAK
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FGB40T65SPD-F085 Datasheet (PDF)
fgb40t65spd-f085.pdf
IGBT - Field Stop, Trench650 V, 40 AFGB40T65SPD-F085General DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, while provides 50 V higher blocking voltage andCrugged high current switching reli
afgb40t65sqdn.pdf
AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT
fgb40n60sm.pdf
April 2013FGB40N60SM600 V, 40 A Field Stop IGBTFeatures General DescriptionUUsing novel field stop IGBT technology, Fairchilds new series Maximum Junction Temperature : TJ = 175oCof Field Stop 2nd generation IGBTs offer the optimum Positive Temperaure Co-efficient for Easy Parallel Operatingperformance for welder and PFC applications where low High Curre
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