FGB40T65SPD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGB40T65SPD-F085
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 267
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 26
Capacitancia de salida (Cc), typ, pF: 92
Carga total de la puerta (Qg), typ, nC: 36
Paquete / Cubierta: D2PAK
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FGB40T65SPD-F085 Datasheet (PDF)
fgb40t65spd-f085.pdf
IGBT - Field Stop, Trench650 V, 40 AFGB40T65SPD-F085General DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, while provides 50 V higher blocking voltage andCrugged high current switching reli
afgb40t65sqdn.pdf
AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT
fgb40n60sm.pdf
April 2013FGB40N60SM600 V, 40 A Field Stop IGBTFeatures General DescriptionUUsing novel field stop IGBT technology, Fairchilds new series Maximum Junction Temperature : TJ = 175oCof Field Stop 2nd generation IGBTs offer the optimum Positive Temperaure Co-efficient for Easy Parallel Operatingperformance for welder and PFC applications where low High Curre
Otros transistores... FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 , TGAN40N60FD , FGB5N60UNDF , FGB7N60UNDF , FGD2736G3-F085 , FGD2736G3-F085V , FGD3040G2-F085C , FGB3040G2-F085C , FGD3040G2-F085V , FGD3050G2 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ