FGB40T65SPD-F085 Todos los transistores

 0.1. Size:2020K  onsemi
 fgb40t65spd-f085.pdf

IGBT - Field Stop, Trench 650 V, 40 A FGB40T65SPD-F085 General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD-F085 offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and C rugged high current switching reli

 5.1. Size:265K  onsemi
 afgb40t65sqdn.pdf

AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, D2PAK Features Maximum Junction Temperature TJ = 175 C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 Qualified C These Devices are Pb-Free and are RoHS Compliant T

 9.1. Size:625K  fairchild semi
 fgb40n60sm.pdf

April 2013 FGB40N60SM 600 V, 40 A Field Stop IGBT Features General Description UUsing novel field stop IGBT technology, Fairchild s new series Maximum Junction Temperature TJ = 175oC of Field Stop 2nd generation IGBTs offer the optimum Positive Temperaure Co-efficient for Easy Parallel Operating performance for welder and PFC applications where low High Curre