Справочник IGBT. FGB40T65SPD-F085

 

FGB40T65SPD-F085 Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGB40T65SPD-F085
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 267 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 26 nS
   Coesⓘ - Выходная емкость, типовая: 92 pF
   Тип корпуса: D2PAK
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FGB40T65SPD-F085 Datasheet (PDF)

 0.1. Size:2020K  onsemi
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FGB40T65SPD-F085

IGBT - Field Stop, Trench650 V, 40 AFGB40T65SPD-F085General DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, while provides 50 V higher blocking voltage andCrugged high current switching reli

 5.1. Size:265K  onsemi
afgb40t65sqdn.pdfpdf_icon

FGB40T65SPD-F085

AFGB40T65SQDNIGBT for AutomotiveApplications, 650 V, 40 A,D2PAKFeatures Maximum Junction Temperature: TJ = 175C www.onsemi.com High Speed Switching Series VCE(sat) = 1.6 V (Typ.) @ IC = 40 A BVCES VCE(sat) TYP IC MAX 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AEC-Q101 QualifiedC These Devices are Pb-Free and are RoHS CompliantT

 9.1. Size:625K  fairchild semi
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FGB40T65SPD-F085

April 2013FGB40N60SM600 V, 40 A Field Stop IGBTFeatures General DescriptionUUsing novel field stop IGBT technology, Fairchilds new series Maximum Junction Temperature : TJ = 175oCof Field Stop 2nd generation IGBTs offer the optimum Positive Temperaure Co-efficient for Easy Parallel Operatingperformance for welder and PFC applications where low High Curre

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