FGD3N60UNDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGD3N60UNDF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 60
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 6
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2
Tensión máxima de puerta-umbral |VGE(th)|, V: 8.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 1.8
Capacitancia de salida (Cc), typ, pF: 28
Carga total de la puerta (Qg), typ, nC: 1.6
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de FGD3N60UNDF - IGBT
FGD3N60UNDF Datasheet (PDF)
fgd3n60undf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgd3n60lsd.pdf
September 2006FGD3N60LSDtmIGBTFeatures Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3Ations where very low On-Voltage Drop is a required feature. High Input ImpedanceApplications HID Lamp App
fgd3n60lsd.pdf
FGD3N60LSDIGBTDescriptionON Semiconductor's Insulated Gate Bipolar Transistors Features(IGBTs) provide very low conduction losses. The device is High Current Capability designed for applica-tions where very low On-Voltage Drop is a required feature. Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input ImpedanceApplications HID Lamp Applications
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ