FGD3N60UNDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 2006FGD3N60LSDtmIGBTFeatures Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3Ations where very low On-Voltage Drop is a required feature. High Input ImpedanceApplications HID Lamp App

FGD3N60LSDIGBTDescriptionON Semiconductor's Insulated Gate Bipolar Transistors Features(IGBTs) provide very low conduction losses. The device is High Current Capability designed for applica-tions where very low On-Voltage Drop is a required feature. Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input ImpedanceApplications HID Lamp Applications