Справочник IGBT. FGD3N60UNDF

 

FGD3N60UNDF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGD3N60UNDF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 60
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 6
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 8.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 1.8
   Емкость коллектора типовая (Cc), pf: 28
   Общий заряд затвора (Qg), typ, nC: 1.6
   Тип корпуса: DPAK

 Аналог (замена) для FGD3N60UNDF

 

 

FGD3N60UNDF Datasheet (PDF)

 ..1. Size:1144K  onsemi
fgd3n60undf.pdf

FGD3N60UNDF
FGD3N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:872K  fairchild semi
fgd3n60lsd.pdf

FGD3N60UNDF
FGD3N60UNDF

September 2006FGD3N60LSDtmIGBTFeatures Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3Ations where very low On-Voltage Drop is a required feature. High Input ImpedanceApplications HID Lamp App

 7.2. Size:886K  onsemi
fgd3n60lsd.pdf

FGD3N60UNDF
FGD3N60UNDF

FGD3N60LSDIGBTDescriptionON Semiconductor's Insulated Gate Bipolar Transistors Features(IGBTs) provide very low conduction losses. The device is High Current Capability designed for applica-tions where very low On-Voltage Drop is a required feature. Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input ImpedanceApplications HID Lamp Applications

Другие IGBT... FGD3050G2 , FGD3050G2V , FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , IXGH60N60 , FGD5T120SH , FGH12040WD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 .

 

 
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