FGH12040WD Todos los transistores

 

FGH12040WD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH12040WD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 428 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de FGH12040WD IGBT

   - Selección ⓘ de transistores por parámetros

 

FGH12040WD Datasheet (PDF)

 ..1. Size:805K  onsemi
 fgh12040wd.pdf pdf_icon

FGH12040WD

IGBT - Field Stop, Trench1200 V, 40 AFGH12040WDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 2nd generation IGBTs offer the optimumwww.onsemi.comperformance for welder applications where low conductionand switching losses are essential.CFeatures Maximum Junction Temperature: TJ =175C Positive Temperature Co-effici

Otros transistores... FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH , FGH60N60SMD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 .

History: OST50N65HMF | XP015PJE120AT1B1 | MMG75S120B6UN | BLG20T65FDLA-B | MIXA600CF650TSF | 1MBI200U4H-120L-50 | SRE60N065FSU

 

 
Back to Top

 


 
.