All IGBT. FGH12040WD Datasheet

 

FGH12040WD Datasheet and Replacement


   Type Designator: FGH12040WD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Package: TO247
 

 FGH12040WD substitution

   - IGBT ⓘ Cross-Reference Search

 

FGH12040WD Datasheet (PDF)

 ..1. Size:805K  onsemi
 fgh12040wd.pdf pdf_icon

FGH12040WD

IGBT - Field Stop, Trench1200 V, 40 AFGH12040WDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 2nd generation IGBTs offer the optimumwww.onsemi.comperformance for welder applications where low conductionand switching losses are essential.CFeatures Maximum Junction Temperature: TJ =175C Positive Temperature Co-effici

Datasheet: FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH , FGH60N60SMD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 .

History: SRE75N065FSU2DH

Keywords - FGH12040WD transistor datasheet

 FGH12040WD cross reference
 FGH12040WD equivalent finder
 FGH12040WD lookup
 FGH12040WD substitution
 FGH12040WD replacement

 

 
Back to Top

 


 
.