FGH12040WD PDF and Equivalents Search

 

FGH12040WD Specs and Replacement

Type Designator: FGH12040WD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO247

 FGH12040WD Substitution

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FGH12040WD datasheet

 ..1. Size:805K  onsemi
 fgh12040wd.pdf pdf_icon

FGH12040WD

IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 2nd generation IGBTs offer the optimum www.onsemi.com performance for welder applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ =175 C Positive Temperature Co-effici... See More ⇒

Specs: FGD3245G2-F085, FGB3245G2-F085, FGD3245G2-F085C, FGD3245G2-F085V, FGD3325G2-F085, FGD3440G2-F085V, FGD3N60UNDF, FGD5T120SH, RJP30H2A, FGH15T120SMD, FGH20N60SFDTU, FGH20N60SFDTU-F085, FGH30S150P, FGH40N60SFDTU, FGH40N60SFDTU-F085, FGH40N60SMD-F085, FGH40N60SMDF-F085

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