All IGBT. FGH12040WD Datasheet

 

FGH12040WD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH12040WD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 226 nC
   Package: TO247

 FGH12040WD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH12040WD Datasheet (PDF)

 ..1. Size:805K  onsemi
 fgh12040wd.pdf

FGH12040WD FGH12040WD

IGBT - Field Stop, Trench1200 V, 40 AFGH12040WDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 2nd generation IGBTs offer the optimumwww.onsemi.comperformance for welder applications where low conductionand switching losses are essential.CFeatures Maximum Junction Temperature: TJ =175C Positive Temperature Co-effici

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