FGH12040WD IGBT. Datasheet pdf. Equivalent
Type Designator: FGH12040WD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 428
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
Maximum G-E Threshold Voltag |VGE(th)|, V: 8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 70
Collector Capacity (Cc), typ, pF: 105
Total Gate Charge (Qg), typ, nC: 226
Package: TO247
FGH12040WD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH12040WD Datasheet (PDF)
fgh12040wd.pdf
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IGBT - Field Stop, Trench1200 V, 40 AFGH12040WDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 2nd generation IGBTs offer the optimumwww.onsemi.comperformance for welder applications where low conductionand switching losses are essential.CFeatures Maximum Junction Temperature: TJ =175C Positive Temperature Co-effici
Datasheet: FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH , RJP63F3DPP-M0 , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 .
![FGH12040WD](https://alltransistors.com/images/us.png)
![FGH12040WD](https://alltransistors.com/images/es.png)
![FGH12040WD](https://alltransistors.com/images/ru.png)
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