FGH30S150P Todos los transistores

 ..1. Size:422K  onsemi
 fgh30s150p.pdf

IGBT - Shorted-anode 1500 V, 30 A FGH30S150P Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor s shorted-anode trench IGBTs offer superior www.onsemi.com conduction and switching performances for soft switching applications. The device can operate in parallel configuration with C exceptional avalanche capability. This device is designed for

 7.1. Size:667K  fairchild semi
 fgh30s130p.pdf

October 2012 FGH30S130P TM Shorted Anode IGBT Features General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol- ogy, Fairchild s Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage VCE(sat) =1.75V @ IC = 30A conduction and switching performances, and easy parallel oper- High input impedance ation with exceptiona

 7.2. Size:538K  onsemi
 fgh30s130p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:717K  fairchild semi
 fgh30n60lsd.pdf

July 2008 FGH30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar tra

 9.2. Size:582K  fairchild semi
 fgh30n120ftd.pdf

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A rug

 9.3. Size:388K  onsemi
 fgh30n60lsd.pdf

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, www.onsemi.com which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low C conduction losses are the most important factor. Features Low Saturation Voltage VC