FGH30S150P Datasheet and Replacement
Type Designator: FGH30S150P
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 292 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Qgⓘ - Total Gate Charge, typ: 369 nC
Package: TO247
- IGBT Cross-Reference
FGH30S150P Datasheet (PDF)
fgh30s150p.pdf

IGBT - Shorted-anode1500 V, 30 AFGH30S150PDescriptionUsing advanced field stop trench and shorted-anode technology,ON Semiconductors shorted-anode trench IGBTs offer superiorwww.onsemi.comconduction and switching performances for soft switchingapplications. The device can operate in parallel configuration withCexceptional avalanche capability. This device is designed for
fgh30s130p.pdf

October 2012FGH30S130PTMShorted Anode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and Shorted Anode technol-ogy, Fairchilds Shorted AnodeTM Trench IGBTs offer superior Low saturation voltage: VCE(sat) =1.75V @ IC = 30Aconduction and switching performances, and easy parallel oper- High input impedanceation with exceptiona
fgh30s130p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh30n60lsd.pdf

July 2008FGH30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolartra
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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