IXGH17N100 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH17N100
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 175 pF
Encapsulados: TO247
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IXGH17N100 datasheet
ixgh17n100.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C
ixgh17n100u1.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V High speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A G = Gate, C = Collector, IC90
ixgh17n100au1.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V High speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A G = Gate, C = Collector, IC90
ixgh17n100a.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C
Otros transistores... IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , RJP30H2A , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 .
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