FGH40T70SHD Todos los transistores

 

FGH40T70SHD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH40T70SHD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 268 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 75 pF
   Qgⓘ - Carga total de la puerta, typ: 69 nC
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de FGH40T70SHD - IGBT

 

FGH40T70SHD Datasheet (PDF)

 ..1. Size:525K  onsemi
fgh40t70shd.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench700 V, 40 AFGH40T70SHDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for Solar Inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ

 8.1. Size:501K  1
fgh40t120smd.pdf

FGH40T70SHD
FGH40T70SHD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.2. Size:498K  1
fgh40t65shdf.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features

 8.3. Size:662K  onsemi
fgh40t65sqd.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 8.4. Size:591K  onsemi
fgh40t120smd fgh40t120smd-f155.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench1200 V, 40 AFGH40T120SMD,FGH40T120SMD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerthe optimum performance for hard switching application such as solarCinverter, UPS, welder and PFC applications.Features FS Trench Technology, Positive Temperature

 8.5. Size:3131K  onsemi
fgh40t65spd-f085.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

 8.6. Size:1508K  onsemi
fgh40t65shd-f155.pdf

FGH40T70SHD
FGH40T70SHD

 8.7. Size:573K  onsemi
fgh40t100smd.pdf

FGH40T70SHD
FGH40T70SHD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.8. Size:753K  onsemi
fgh40t65uqdf.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UQDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer superior conduction andwww.onsemi.comswitching performance and easy parallel operation. This device is wellsuited for the resonant or soft switching application such as inductionVCES ICheating and MWO.650

 8.9. Size:900K  onsemi
fgh40t65shdf.pdf

FGH40T70SHD
FGH40T70SHD

FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 8.10. Size:450K  onsemi
fgh40t65upd.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

 8.11. Size:469K  onsemi
fgh40t120sqdnl4.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Ultra Field StopFGH40T120SQDNL4This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the devicewww.onsemi

 8.12. Size:592K  onsemi
fgh40t120smdl4.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi

 8.13. Size:475K  onsemi
fgh40t65sh.pdf

FGH40T70SHD
FGH40T70SHD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

Otros transistores... FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , IRG7R313U , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 .

 

 
Back to Top

 


FGH40T70SHD
  FGH40T70SHD
  FGH40T70SHD
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top