FGH40T70SHD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T70SHD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 75 pF
Qgⓘ - Carga total de la puerta, typ: 69 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGH40T70SHD - IGBT
FGH40T70SHD Datasheet (PDF)
fgh40t70shd.pdf
IGBT - Field Stop, Trench700 V, 40 AFGH40T70SHDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for Solar Inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ
fgh40t120smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t65shdf.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features
fgh40t65sqd.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te
fgh40t120smd fgh40t120smd-f155.pdf
IGBT - Field Stop, Trench1200 V, 40 AFGH40T120SMD,FGH40T120SMD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerthe optimum performance for hard switching application such as solarCinverter, UPS, welder and PFC applications.Features FS Trench Technology, Positive Temperature
fgh40t65spd-f085.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V
fgh40t100smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t65uqdf.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65UQDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer superior conduction andwww.onsemi.comswitching performance and easy parallel operation. This device is wellsuited for the resonant or soft switching application such as inductionVCES ICheating and MWO.650
fgh40t65upd.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175
fgh40t120sqdnl4.pdf
IGBT - Ultra Field StopFGH40T120SQDNL4This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the devicewww.onsemi
fgh40t120smdl4.pdf
IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi
fgh40t65sh.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ
Otros transistores... FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , IRG7R313U , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 .
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