FGH40T70SHD Specs and Replacement
Type Designator: FGH40T70SHD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 75 pF
Package: TO247
- IGBTⓘ Cross-Reference Search
FGH40T70SHD datasheet
..1. Size:525K onsemi
fgh40t70shd.pdf 

IGBT - Field Stop, Trench 700 V, 40 A FGH40T70SHD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for Solar Inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ... See More ⇒
8.1. Size:501K 1
fgh40t120smd.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.2. Size:498K 1
fgh40t65shdf.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒
8.3. Size:662K onsemi
fgh40t65sqd.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 40 A Max Junction Te... See More ⇒
8.4. Size:591K onsemi
fgh40t120smd fgh40t120smd-f155.pdf 

IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar C inverter, UPS, welder and PFC applications. Features FS Trench Technology, Positive Temperature... See More ⇒
8.5. Size:3131K onsemi
fgh40t65spd-f085.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD-F085 offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. V... See More ⇒
8.7. Size:573K onsemi
fgh40t100smd.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.8. Size:753K onsemi
fgh40t65uqdf.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer superior conduction and www.onsemi.com switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction VCES IC heating and MWO. 650... See More ⇒
8.10. Size:450K onsemi
fgh40t65upd.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ = 175... See More ⇒
8.11. Size:469K onsemi
fgh40t120sqdnl4.pdf 

IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device www.onsemi... See More ⇒
8.12. Size:592K onsemi
fgh40t120smdl4.pdf 

IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. VCES IC Features 1200 V 40 A FS Trench Technology, Positive Temperature Coeffi... See More ⇒
8.13. Size:475K onsemi
fgh40t65sh.pdf 

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SH Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ... See More ⇒
Specs: FGH40T120SQDNL4, FGH40T65SH, FGH40T65SHDF, FGH40T65SHD-F155, FGH40T65SPD-F085, FGH40T65SQD, FGH40T65UPD, FGH40T65UQDF, GT30G124, FGH50T65UPD, FGH60N60SFDTU-F085, FGH60N60UFDTU-F085, FGH60T65SHD, FGH60T65SQD-F155, FGH75T65SHD, FGH75T65SHDT, FGH75T65SHDTL4
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