FGH60T65SHD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH60T65SHD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 349 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 48 nS
Coesⓘ - Capacitancia de salida, typ: 110 pF
Encapsulados: TO247
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FGH60T65SHD datasheet
fgh60t65shd.pdf
FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT General Description Features Using novel field stop IGBT technology, ON Semiconductor's Maximum Junction Temperature TJ =175oC new series of field stop 3rd generation IGBTs offer the Positive Temperature Co-efficient for Easy Parallel Operating optimum performance for solar inverter, UPS, welder, telecom, High Current Cap
fgh60t65sqd-f155.pdf
FGH60T65SQD-F155 Field Stop Trench IGBT 650 V, 60 A Description Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 60 A Max Junction T
fgh60n60smd.pdf
March 2011 FGH60N60SMD tm 600V, 60A Field Stop IGBT Features General Description Maximum Junction Temperature TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- High c
fgh60n60ufd.pdf
April 2009 FGH60N60UFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) = 1.9V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc High input impedance tion and swi
Otros transistores... FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , RJH30E2DPP , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 .
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