FGH60T65SHD Todos los transistores

 

FGH60T65SHD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH60T65SHD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 349 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 48 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Qgⓘ - Carga total de la puerta, typ: 102 nC
   Paquete / Cubierta: TO247

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FGH60T65SHD Datasheet (PDF)

 ..1. Size:861K  onsemi
fgh60t65shd.pdf

FGH60T65SHD
FGH60T65SHD

FGH60T65SHD650 V, 60 A Field Stop Trench IGBTGeneral DescriptionFeatures Using novel field stop IGBT technology, ON Semiconductor's Maximum Junction Temperature : TJ =175oCnew series of field stop 3rd generation IGBTs offer the Positive Temperature Co-efficient for Easy Parallel Operatingoptimum performance for solar inverter, UPS, welder, telecom, High Current Cap

 5.1. Size:316K  onsemi
fgh60t65sqd-f155.pdf

FGH60T65SHD
FGH60T65SHD

FGH60T65SQD-F155Field Stop Trench IGBT650 V, 60 ADescriptionUsing novel field stop IGBT technology, ON semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures 650 V 60 A Max Junction T

 9.1. Size:391K  fairchild semi
fgh60n60smd.pdf

FGH60T65SHD
FGH60T65SHD

March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c

 9.2. Size:756K  fairchild semi
fgh60n60ufd.pdf

FGH60T65SHD
FGH60T65SHD

April 2009FGH60N60UFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) = 1.9V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc High input impedancetion and swi

 9.3. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60T65SHD
FGH60T65SHD

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 9.4. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60T65SHD
FGH60T65SHD

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 9.5. Size:693K  onsemi
fgh60n60smd.pdf

FGH60T65SHD
FGH60T65SHD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60T65SHD
FGH60T65SHD

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 9.7. Size:396K  onsemi
fgh60n60sf.pdf

FGH60T65SHD
FGH60T65SHD

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 9.8. Size:1128K  onsemi
fgh60n60ufdtu-f085.pdf

FGH60T65SHD
FGH60T65SHD

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.9. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60T65SHD
FGH60T65SHD

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

Otros transistores... FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , TGAN60N60F2DS , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 .

 

 
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