FGH60T65SHD Datasheet and Replacement

FGH60T65SHD650 V, 60 A Field Stop Trench IGBTGeneral DescriptionFeatures Using novel field stop IGBT technology, ON Semiconductor's Maximum Junction Temperature : TJ =175oCnew series of field stop 3rd generation IGBTs offer the Positive Temperature Co-efficient for Easy Parallel Operatingoptimum performance for solar inverter, UPS, welder, telecom, High Current Cap

FGH60T65SQD-F155Field Stop Trench IGBT650 V, 60 ADescriptionUsing novel field stop IGBT technology, ON semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures 650 V 60 A Max Junction T

March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c

April 2009FGH60N60UFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) = 1.9V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc High input impedancetion and swi

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s