FGH60T65SQD-F155 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH60T65SQD-F155
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 333 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 8 nS
Coesⓘ - Capacitancia de salida, typ: 90 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGH60T65SQD-F155 Datasheet (PDF)
fgh60t65sqd-f155.pdf

FGH60T65SQD-F155Field Stop Trench IGBT650 V, 60 ADescriptionUsing novel field stop IGBT technology, ON semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures 650 V 60 A Max Junction T
fgh60t65shd.pdf

FGH60T65SHD650 V, 60 A Field Stop Trench IGBTGeneral DescriptionFeatures Using novel field stop IGBT technology, ON Semiconductor's Maximum Junction Temperature : TJ =175oCnew series of field stop 3rd generation IGBTs offer the Positive Temperature Co-efficient for Easy Parallel Operatingoptimum performance for solar inverter, UPS, welder, telecom, High Current Cap
fgh60n60smd.pdf

March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c
fgh60n60ufd.pdf

April 2009FGH60N60UFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) = 1.9V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc High input impedancetion and swi
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: SGW5N60RUFD | IXGA48N60C3 | IXXH50N60C3 | MM60G3U65B | IXBX28N300HV | MMG400D060B6TC | BSM300GB120DLC
History: SGW5N60RUFD | IXGA48N60C3 | IXXH50N60C3 | MM60G3U65B | IXBX28N300HV | MMG400D060B6TC | BSM300GB120DLC



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