FGH60T65SQD-F155 - аналоги и описание IGBT

FGH60T65SQD-F155 Field Stop Trench IGBT 650 V, 60 A Description Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 60 A Max Junction T

FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT General Description Features Using novel field stop IGBT technology, ON Semiconductor's Maximum Junction Temperature TJ =175oC new series of field stop 3rd generation IGBTs offer the Positive Temperature Co-efficient for Easy Parallel Operating optimum performance for solar inverter, UPS, welder, telecom, High Current Cap

March 2011 FGH60N60SMD tm 600V, 60A Field Stop IGBT Features General Description Maximum Junction Temperature TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- High c

April 2009 FGH60N60UFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) = 1.9V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc High input impedance tion and swi

April 2009 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and swi

July 2008 FGH60N60SF tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switc

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2008 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and sw

IGBT - Field Stop 600 V, 60 A FGH60N60SF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 60 A High Current Capability C Low Saturation Voltage VCE(sat) =

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s new series of Field Stop IGBTs offer the optimum performance for www.onsemi.com Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage VCE(s