FGH75T65SQDT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH75T65SQDT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Coesⓘ - Capacitancia de salida, typ: 155 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGH75T65SQDT Datasheet (PDF)
fgh75t65sqdt.pdf

FGH75T65SQDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON semiconductors new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Curr
fgh75t65sqdtl4.pdf

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
fgh75t65sqd.pdf

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ
fgh75t65shdtl4.pdf

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SHDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
Otros transistores... FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , JT075N065WED , FGH75T65SQDTL4 , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ .
History: BSM50GB100D | IQGB228N120GB4 | 2MBI200TA-060 | F12-25R12KT4G | CM300DY-12H | SRE100N065FSUD6 | MMG25H120XB6TN
History: BSM50GB100D | IQGB228N120GB4 | 2MBI200TA-060 | F12-25R12KT4G | CM300DY-12H | SRE100N065FSUD6 | MMG25H120XB6TN



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