FGH75T65SQDT - аналоги и описание IGBT

 

FGH75T65SQDT - аналоги, основные параметры, даташиты

Наименование: FGH75T65SQDT

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 10 nS

Coesⓘ - Выходная емкость, типовая: 155 pF

Тип корпуса: TO247

 Аналог (замена) для FGH75T65SQDT

- подбор ⓘ IGBT транзистора по параметрам

 

FGH75T65SQDT даташит

 ..1. Size:1229K  onsemi
fgh75t65sqdt.pdfpdf_icon

FGH75T65SQDT

FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr

 0.1. Size:698K  onsemi
fgh75t65sqdtl4.pdfpdf_icon

FGH75T65SQDT

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc

 3.1. Size:522K  onsemi
fgh75t65sqd.pdfpdf_icon

FGH75T65SQDT

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ

 5.1. Size:570K  onsemi
fgh75t65shdtl4.pdfpdf_icon

FGH75T65SQDT

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc

Другие IGBT... FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , CRG15T120BNR3S , FGH75T65SQDTL4 , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ .

History: FGB5N60UNDF | SMBL1G150US60 | FGD3040G2-F085C

 

 

 

 

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