FGH75T65UPD-F155 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH75T65UPD-F155
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 375
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 43
Capacitancia de salida (Cc), typ, pF: 205
Carga total de la puerta (Qg), typ, nC: 385
Paquete / Cubierta: TO247
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FGH75T65UPD-F155 Datasheet (PDF)
fgh75t65upd fgh75t65upd-f155.pdf
IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD,FGH75T65UPD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offeroptimum performance for solar inverter, UPS, welder, and digitalCpower genera-tor where low conduction and switching losses areessential.FeaturesG Maximum Junctio
fgh75t65upd-f085.pdf
IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD-F085DescriptionUsing Novel Field Stop Trench IGBT Technology,ON Semiconductors new series of Field Stop Trench IGBTs offerwww.onsemi.comthe optimum performance for Automotive chargers, Solar Inverter,UPS and Digital Power Generator where low conduction andswitching losses are essential.CFeatures Maximum Junction Tempe
fgh75t65upd.pdf
August 2012FGH75T65UPD650V, 75A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchildsnew series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operatingmance for Solar Inverter , UPS and Digital Power Generator High
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ