FGH75T65UPD-F155 - аналоги, параметры транзистора

FGH75T65UPD-F155 даташит

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital C power genera-tor where low conduction and switching losses are essential. Features G Maximum Junctio

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor s new series of Field Stop Trench IGBTs offer www.onsemi.com the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. C Features Maximum Junction Tempe

3.1. Size:910K fairchild semi
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August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild s new series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator High

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