FGHL40T65MQD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGHL40T65MQD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 238
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 13
Capacitancia de salida (Cc), typ, pF: 64
Carga total de la puerta (Qg), typ, nC: 86
Paquete / Cubierta: TO247
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FGHL40T65MQD Datasheet (PDF)
fghl40t65mqd.pdf
Field Stop Trench IGBT650 V, 40 AFGHL40T65MQDField stop 4th generation mid speed IGBT technology and fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability BVCES VCE(sat) TYP IC MAX Low Saturation Voltage: VCE(sat) = 1.45 V (Typ
afghl40t65sqd.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified40 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V
afghl40t65sq.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified40 A, 650 V Maximum Junction Temperature: TJ = 175
afghl40t65spd.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SPDDescriptionUsing the novel field stop 3rd generation IGBT technology,AFGHL40T65SPD offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, which provides 50 V higher blocking voltageVCES Eon VCE(Sat)and rugged high current switching relia
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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