FGHL40T65MQD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGHL40T65MQD datasheet

..1. Size:330K onsemi
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Field Stop Trench IGBT 650 V, 40 A FGHL40T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability BVCES VCE(sat) TYP IC MAX Low Saturation Voltage VCE(sat) = 1.45 V (Typ

5.1. Size:346K onsemi
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5.2. Size:331K onsemi
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Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 40 A, 650 V Maximum Junction Temperature TJ = 175

5.3. Size:400K onsemi
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Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage VCES Eon VCE(Sat) and rugged high current switching relia

Otros transistores... FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , CRG40T60AK3HD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF .