Справочник IGBT. FGHL40T65MQD

 

FGHL40T65MQD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGHL40T65MQD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 238
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.45
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 13
   Емкость коллектора типовая (Cc), pf: 64
   Общий заряд затвора (Qg), typ, nC: 86
   Тип корпуса: TO247

 Аналог (замена) для FGHL40T65MQD

 

 

FGHL40T65MQD Datasheet (PDF)

 ..1. Size:330K  onsemi
 fghl40t65mqd.pdf

FGHL40T65MQD FGHL40T65MQD

Field Stop Trench IGBT650 V, 40 AFGHL40T65MQDField stop 4th generation mid speed IGBT technology and fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability BVCES VCE(sat) TYP IC MAX Low Saturation Voltage: VCE(sat) = 1.45 V (Typ

 5.1. Size:346K  onsemi
 afghl40t65sqd.pdf

FGHL40T65MQD FGHL40T65MQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified40 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

 5.2. Size:331K  onsemi
 afghl40t65sq.pdf

FGHL40T65MQD FGHL40T65MQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified40 A, 650 V Maximum Junction Temperature: TJ = 175

 5.3. Size:400K  onsemi
 afghl40t65spd.pdf

FGHL40T65MQD FGHL40T65MQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SPDDescriptionUsing the novel field stop 3rd generation IGBT technology,AFGHL40T65SPD offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, which provides 50 V higher blocking voltageVCES Eon VCE(Sat)and rugged high current switching relia

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top