FGHL50T65SQDT Todos los transistores

 ..1. Size:387K  onsemi
 fghl50t65sqdt.pdf

IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor s new www.onsemi.com series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 50 A, 650 V VCESat = 1.47 V (Typ.) Feature

 2.1. Size:334K  onsemi
 afghl50t65sqd.pdf

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 afghl50t65sqdc.pdf

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 V Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and www.onsemi.com Inverter. Features 50 A, 650 V

 3.1. Size:375K  onsemi
 fghl50t65sq.pdf

FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A, TO-247-3L Features Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating www.onsemi.com High Current Capability Low Saturation Voltage VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1) BVCES VCE(sat) TYP IC MAX High Input Impedance

 3.2. Size:238K  onsemi
 afghl50t65sq.pdf

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 50 A, 650 V Maximum Junction Temperature TJ = 175