Справочник IGBT. FGHL50T65SQDT

 

FGHL50T65SQDT - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGHL50T65SQDT
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 268
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.47
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.4
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 5.2
   Емкость коллектора типовая (Cc), pf: 136
   Общий заряд затвора (Qg), typ, nC: 99.7
   Тип корпуса: TO247

 Аналог (замена) для FGHL50T65SQDT

 

 

FGHL50T65SQDT Datasheet (PDF)

 ..1. Size:387K  onsemi
 fghl50t65sqdt.pdf

FGHL50T65SQDT FGHL50T65SQDT

IGBT - Field Stop, Trench650 V, 50 AProduct PreviewFGHL50T65SQDTUsing novel field stop IGBT technology, ON Semiconductors newwww.onsemi.comseries of field stop 4th generation IGBTs offer the optimumperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.50 A, 650 VVCESat = 1.47 V (Typ.)Feature

 2.1. Size:334K  onsemi
 afghl50t65sqd.pdf

FGHL50T65SQDT FGHL50T65SQDT

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified50 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

 2.2. Size:340K  onsemi
 afghl50t65sqdc.pdf

FGHL50T65SQDT FGHL50T65SQDT

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 VUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology,AFGHL50T65SQDC offers the optimum performance with both lowconduction and switching losses for high efficiency operations invarious applications, especially totem pole bridgeless PFC and www.onsemi.comInverter.Features50 A, 650 V

 3.1. Size:375K  onsemi
 fghl50t65sq.pdf

FGHL50T65SQDT FGHL50T65SQDT

FGHL50T65SQIGBT for PFC Applications650 V, 50 A, TO-247-3LFeatures Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operatingwww.onsemi.com High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1)BVCES VCE(sat) TYP IC MAX High Input Impedance

 3.2. Size:238K  onsemi
 afghl50t65sq.pdf

FGHL50T65SQDT FGHL50T65SQDT

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified50 A, 650 V Maximum Junction Temperature: TJ = 175

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