FGHL75T65MQDT Todos los transistores

 

FGHL75T65MQDT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGHL75T65MQDT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 163 pF

Encapsulados: TO247

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FGHL75T65MQDT datasheet

 ..1. Size:241K  onsemi
fghl75t65mqdt.pdf pdf_icon

FGHL75T65MQDT

DATA SHEET www.onsemi.com Field Stop Trench IGBT 75 A, 650 V 650 V, 75 A VCESat = 1.45 V FGHL75T65MQDT C Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features G Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating E High Current Capability Low Saturation Voltage VC

 2.1. Size:334K  onsemi
fghl75t65mqd.pdf pdf_icon

FGHL75T65MQDT

Field Stop Trench IGBT 650 V, 75 A FGHL75T65MQD Field stop 4th generation mid speed IGBT technology and Full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 75 A Low Saturation Voltage VC

 5.1. Size:410K  onsemi
afghl75t65sqdc.pdf pdf_icon

FGHL75T65MQDT

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and

 5.2. Size:336K  onsemi
fghl75t65lqdt.pdf pdf_icon

FGHL75T65MQDT

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. www.onsemi.com Features VCES IC VCE(Sat) Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current Capability C Low Saturatio

Otros transistores... FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , GT30F131 , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN .

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