FGHL75T65MQDT Даташит. Аналоги. Параметры и характеристики.
Наименование: FGHL75T65MQDT
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 375 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 163 pF
Qg ⓘ - Общий заряд затвора, typ: 149 nC
Тип корпуса: TO247
Аналог (замена) для FGHL75T65MQDT
FGHL75T65MQDT Datasheet (PDF)
fghl75t65mqdt.pdf

DATA SHEETwww.onsemi.comField Stop Trench IGBT75 A, 650 V 650 V, 75 AVCESat = 1.45 VFGHL75T65MQDTCField stop 4th generation mid speed IGBT technology copackedwith full rated current diode.FeaturesG Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingE High Current Capability Low Saturation Voltage: VC
fghl75t65mqd.pdf

Field Stop Trench IGBT650 V, 75 AFGHL75T65MQDField stop 4th generation mid speed IGBT technology and Fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingBVCES VCE(sat) TYP IC MAX High Current Capability650 V 1.45 V 75 A Low Saturation Voltage: VC
afghl75t65sqdc.pdf

IGBT Hybrid, Field Stop,Trench650 V, 75 A, TO247AFGHL75T65SQDCUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andwww.onsemi.comswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and
fghl75t65lqdt.pdf

IGBT - Field Stop, Trench75 A, 650 VFGHL75T65LQDTDescriptionField stop 4th generation Low Vce(sat) IGBT technology and Fullcurrent rated copak Diode technology.www.onsemi.comFeaturesVCES IC VCE(Sat) Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current CapabilityC Low Saturatio
Другие IGBT... FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , GT30F125 , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN .
History: OST50N65HSNF | MITA15WB1200TMH | RGT50NL65D | MPMC200B120RH | MIXA40W1200TML | FF150R12RT4 | APT30GT60BRG
History: OST50N65HSNF | MITA15WB1200TMH | RGT50NL65D | MPMC200B120RH | MIXA40W1200TML | FF150R12RT4 | APT30GT60BRG



Список транзисторов
Обновления
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