FGP15N60UNDF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGP15N60UNDF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 178 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 9.8 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Encapsulados: TO220
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FGP15N60UNDF datasheet
fgp15n60undf.pdf
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Otros transistores... FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , CRG75T60AK3HD , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT .
History: SKM400GAL124D | 6MBP100VDA120-50 | SKM200GAY173D
History: SKM400GAL124D | 6MBP100VDA120-50 | SKM200GAY173D
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