IXGH20N100 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH20N100
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 73 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXGH20N100 - IGBT
IXGH20N100 Datasheet (PDF)
ixgh20n100 ixgt20n100.pdf
IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS
ixgh20n100.pdf
IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS
ixgh20n100a3.pdf
Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V
ixgh20n120b ixgt20n120b.pdf
IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM
ixgh20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgh20n120.pdf
VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgh20n120b.pdf
IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM
ixgh20n120 ixgt20n120.pdf
VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A
ixgh20n140c3h1.pdf
Advance Technical InformationVCES = 1400VGenX3TM 1400V IGBTs IXGH20N140C3H1IC100 = 20Aw/ Diode IXGT20N140C3H1VCE(sat) 5.0Vtfi(typ) = 32nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1400 VCC (Tab)EVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous
Otros transistores... IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , RJP30H1DPD , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2