Справочник IGBT. IXGH20N100

 

IXGH20N100 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGH20N100
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1000 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Тип корпуса: TO247

 Аналог (замена) для IXGH20N100

 

 

IXGH20N100 Datasheet (PDF)

 ..1. Size:53K  ixys
 ixgh20n100 ixgt20n100.pdf

IXGH20N100 IXGH20N100

IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS

 ..2. Size:52K  ixys
 ixgh20n100.pdf

IXGH20N100 IXGH20N100

IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS

 0.1. Size:220K  ixys
 ixgh20n100a3.pdf

IXGH20N100 IXGH20N100

Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V

 6.1. Size:568K  ixys
 ixgh20n120b ixgt20n120b.pdf

IXGH20N100 IXGH20N100

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 6.2. Size:234K  ixys
 ixgh20n120a3.pdf

IXGH20N100 IXGH20N100

VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG

 6.3. Size:104K  ixys
 ixgh20n120.pdf

IXGH20N100 IXGH20N100

VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A

 6.4. Size:236K  ixys
 ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf

IXGH20N100 IXGH20N100

VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG

 6.5. Size:565K  ixys
 ixgh20n120b.pdf

IXGH20N100 IXGH20N100

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

 6.6. Size:106K  ixys
 ixgh20n120 ixgt20n120.pdf

IXGH20N100 IXGH20N100

VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A

 6.7. Size:99K  ixys
 ixgh20n140c3h1.pdf

IXGH20N100 IXGH20N100

Advance Technical InformationVCES = 1400VGenX3TM 1400V IGBTs IXGH20N140C3H1IC100 = 20Aw/ Diode IXGT20N140C3H1VCE(sat) 5.0Vtfi(typ) = 32nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1400 VCC (Tab)EVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous

Другие IGBT... IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , RJP30H1DPD , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B .

 

 
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