FGPF15N60UNDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGPF15N60UNDF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 42
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 30
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 8.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 9.8
Capacitancia de salida (Cc), typ, pF: 80
Carga total de la puerta (Qg), typ, nC: 43
Paquete / Cubierta: TO220F
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FGPF15N60UNDF Datasheet (PDF)
fgpf15n60undf.pdf
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Otros transistores... FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , SGT60N60FD1P7 , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT .
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![FGPF15N60UNDF](https://alltransistors.com/images/es.png)
![FGPF15N60UNDF](https://alltransistors.com/images/ru.png)
Liste
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