All IGBT. FGPF15N60UNDF Datasheet

 

FGPF15N60UNDF IGBT. Datasheet pdf. Equivalent


   Type Designator: FGPF15N60UNDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 42
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 9.8
   Collector Capacity (Cc), typ, pF: 80
   Total Gate Charge (Qg), typ, nC: 43
   Package: TO220F

 FGPF15N60UNDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGPF15N60UNDF Datasheet (PDF)

 ..1. Size:440K  onsemi
 fgpf15n60undf.pdf

FGPF15N60UNDF FGPF15N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , SGT60N60FD1P7 , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT .

 

 
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