FGPF15N60UNDF PDF and Equivalents Search

 

FGPF15N60UNDF Specs and Replacement

Type Designator: FGPF15N60UNDF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 42 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 9.8 nS

Coesⓘ - Output Capacitance, typ: 80 pF

Package: TO220F

 FGPF15N60UNDF Substitution

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FGPF15N60UNDF datasheet

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FGPF15N60UNDF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGHL50T65MQDT, FGHL50T65SQ, FGHL50T65SQDT, FGHL75T65LQDT, FGHL75T65MQD, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGH75T65UPD, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT

Keywords - FGPF15N60UNDF transistor spec

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