FGY120T65SPD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGY120T65SPD-F085
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 882
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 240
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 134
Capacitancia de salida (Cc), typ, pF: 440
Paquete / Cubierta: TO247
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FGY120T65SPD-F085 Datasheet (PDF)
fgy120t65spd-f085.pdf
Field Stop Trench IGBT WithSoft Fast Recovery Diode650 V, 120 AFGY120T65SPD-F085Featureswww.onsemi.com Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A Maximum Junction Temperature : TJ = 175CC Positive Temperature Co-efficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically TestedG Short Cir
afgy120t65spd-b4.pdf
Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped
afgy120t65spd.pdf
Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
Otros transistores... FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , GT30J122 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ