FGY120T65SPD-F085 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGY120T65SPD-F085 datasheet

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Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features www.onsemi.com Very Low Saturation Voltage VCE(sat) = 1.5 V(Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C C Positive Temperature Co-efficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically Tested G Short Cir

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Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A www.onsemi.com AFGY120T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

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Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

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