FGY120T65SPD-F085 - параметры транзистора, его аналоги, Даташиты

FGY120T65SPD-F085 Datasheet (PDF)

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Field Stop Trench IGBT WithSoft Fast Recovery Diode650 V, 120 AFGY120T65SPD-F085Featureswww.onsemi.com Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A Maximum Junction Temperature : TJ = 175CC Positive Temperature Co-efficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically TestedG Short Cir

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Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

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Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

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