FGY75T95SQDT Todos los transistores

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.69 V (Typ.) High Current Capability C Low Saturation Vol

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.31 V (Typ.) High Current Capability C Low Saturation Vol

FGY75T120SQDN Ultra Field Stop IGBT, 1200 V, 75 A General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides www.onsemi.com superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar appli

June 2014 FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage VCE(sat) = 1.9 V @ IC = 75 A mance for solar inverter, UPS, welder and PFC applications High Input Impedance where low co