FGY75T95SQDT IGBT. Datasheet pdf. Equivalent
Type Designator: FGY75T95SQDT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 434 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 950 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.69 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 241 pF
Qgⓘ - Total Gate Charge, typ: 137 nC
Package: TO247
FGY75T95SQDT Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGY75T95SQDT Datasheet (PDF)
fgy75t95sqdt.pdf
IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95SQDTTrench Field Stop 4th generation High Speed IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.69 V (Typ.) High Current CapabilityC Low Saturation Vol
fgy75t95lqdt.pdf
IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Vol
fgy75t120sqdn.pdf
FGY75T120SQDNUltra Field Stop IGBT, 1200 V, 75 AGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar appli
fgy75n60smd.pdf
June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low co
Datasheet: FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , XNF15N60T , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST .
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