All IGBT. FGY75T95SQDT Datasheet

 

FGY75T95SQDT IGBT. Datasheet pdf. Equivalent


   Type Designator: FGY75T95SQDT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 434
   Maximum Collector-Emitter Voltage |Vce|, V: 950
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.69
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 16
   Collector Capacity (Cc), typ, pF: 241
   Total Gate Charge (Qg), typ, nC: 137
   Package: TO247

 FGY75T95SQDT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGY75T95SQDT Datasheet (PDF)

 ..1. Size:585K  onsemi
fgy75t95sqdt.pdf

FGY75T95SQDT
FGY75T95SQDT

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95SQDTTrench Field Stop 4th generation High Speed IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.69 V (Typ.) High Current CapabilityC Low Saturation Vol

 6.1. Size:658K  onsemi
fgy75t95lqdt.pdf

FGY75T95SQDT
FGY75T95SQDT

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Vol

 8.1. Size:618K  onsemi
fgy75t120sqdn.pdf

FGY75T95SQDT
FGY75T95SQDT

FGY75T120SQDNUltra Field Stop IGBT, 1200 V, 75 AGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar appli

 9.1. Size:602K  1
fgy75n60smd.pdf

FGY75T95SQDT
FGY75T95SQDT

June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low co

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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