HGT1S7N60A4S9A Todos los transistores

 ..1. Size:242K  onsemi
 hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have t

 3.1. Size:173K  fairchild semi
 hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have t

 3.2. Size:537K  onsemi
 hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, www.onsemi.com HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

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 hgtp7n60b3d hgt1s7n60b3d hgt1s7n60b3ds.pdf

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 hgtp7n60c3d hgt1s7n60c3ds.pdf

HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 14A, 600V at TC = 25oC The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC of MOSFETs

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 hgtp7n60c3d hgt1s7n60c3d hgt1s7n60c3ds.pdf

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 5.5. Size:557K  fairchild semi
 hgt1s7n60c3ds hgtp7n60c3d.pdf

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha

 5.6. Size:497K  fairchild semi
 hgtp7n60b3d hgt1s7n60b3d.pdf

HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oC The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC of MOSFETs an