HGT1S7N60A4S9A IGBT. Datasheet pdf. Equivalent
Type Designator: HGT1S7N60A4S9A
Type: IGBT
Marking Code: G7N60A4
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 125
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 34
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 11
Total Gate Charge (Qg), typ, nC: 37
Package: TO263
HGT1S7N60A4S9A Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGT1S7N60A4S9A Datasheet (PDF)
hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf
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HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t
hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf
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HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t
hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf
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SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar
hgtp7n60c3d hgt1s7n60c3ds.pdf
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HGTP7N60C3D, HGT1S7N60C3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 14A, 600V at TC = 25oCThe HGTP7N60C3D and HGT1S7N60C3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCof MOSFETs
hgt1s7n60c3ds hgtp7n60c3d.pdf
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September 2005HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodesGeneral Description FeaturesThe HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oCHGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha
hgtp7n60b3d hgt1s7n60b3d.pdf
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HGTP7N60B3D, HGT1S7N60B3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oCThe HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oCof MOSFETs an
Datasheet: FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS , NCE60TD60BT , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S , ISL9V3036S3S , ISL9V3036P3 , ISL9V3040D3ST-F085C .
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