F3L100R12W2H3-B11 Todos los transistores

 

F3L100R12W2H3-B11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: F3L100R12W2H3-B11
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20(100C) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

F3L100R12W2H3-B11 Datasheet (PDF)

 0.1. Size:985K  infineon
 f3l100r12w2h3-b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModulF3L100R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-

 1.1. Size:1149K  infineon
 f3l100r12w2h3 b11.pdf pdf_icon

F3L100R12W2H3-B11

/ Technical InformationIGBT-F3L100R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200VCESI = 50A

 7.1. Size:767K  infineon
 f3l100r07w2e3 b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

 7.2. Size:819K  infineon
 f3l100r07w2e3-b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: VS-150MT060WDF | IKQ100N60TA | STGW15H120DF2 | DAZF075G120SCA | 6MBP50VAA060-50 | TGAN30N135FD1

 

 
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